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K7J161882B - (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM

K7J161882B_6609628.PDF Datasheet


 Full text search : (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM


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CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
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AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R 8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
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Toshiba Corporation
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GSI Technology, Inc.
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Toshiba Corporation
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Toshiba Corporation
MX27C8111 MX27C8111MC-10 MX27C8111MC-12 MX27C8111M 8M-BIT [1M x8/512K x16] CMOS OTP ROM WITH PAGE MODE 512K X 16 OTPROM, 90 ns, PDIP42
Macronix International Co., Ltd.
MCNIX[Macronix International]
MBM29F800B-12 MBM29F800B-90 MBM29F800T-12 MBM29F80 8M (1M ×8/512K ×6) Bit Falsh Memory(V 电源电压1M ×8/512K ×6位闪速存储器)
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Cypress Semiconductor, Corp.
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CYPRESS[Cypress Semiconductor]
 
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